Mahdi Pourfath. ORCID iD. Print view. Open a version of this ORCID record formatted for printing. List of computer science publications by Mahdi Pourfath. Ph.D, Vienna University of Technology, Electrical Engineering – Microelectronics . → , Sharif University of Technology, Electrical Engineering -.
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Home Contact Us Help Free delivery worldwide. All the elements of the kinetic equations, which are the device Hamiltonian, contact self-energies, and scattering self-energies, are examined and efficient methods for their evaluation are explained.
Optical Properties of Graphene Nanoribbons. In these structures tunneling between source and drain is controlled by the gate-source voltage. Exceptional electronic and mechanical properties together with nanoscale diameters make carbon nanotubes CNTs candidates for nanoscale field effect transistors FETs.
Mahi shown in Fig.
Institute for Microelectronics – Annual Review
The Best Books of Unstrained mobility and mobility enhancement with a strain strongly depend on the energy distance between the K- and Q-valleys. Mahdi Pourfath was born in Tehran, Iran, in In short devices less than nm carrier transport through the device is nearly ballistic. Looking for beautiful books?
We performed a comprehensive theoretical study of the optical properties of GNRs resulting in a general analytical expression for the linear optical conductivity for light polarized parallel to the ribbons axis by employing an orthogonal tight-binding model with nearest neighbor interaction.
He studied electrical engineering at the Sharif University of Technology, where he received the degree of Master of Science in An atomistic simulation based on the non-equilibrium Green’s function formalism is employed. Graphene, as the most prominent 2D material, is attractive for use in next-generation nanoelectronic devices because of its high carrier mobility.
The absence of an energy gap, however, seriously jeopardizes pourfatu usage of this material for some important electronic applications, including digital circuits. Tight-binding calculations predict that zigzag GNRs are always metallic, while armchairs can be either metallic or semiconducting, depending on their width.
The electronic band-structure of GNRs depends on the nature of their edges, which can be zigzag or armchair. Hierarchical Device Simulation Christoph Jungemann.
Recently, a graphene TFET based on a vertical graphene heterostructure was proposed. Furthermore, it can be inferred from the results that due pourfaht the smaller density of states and the resulting smaller quantum capacitance of GNRs as compared to graphene, better switching and frequency response can be achieved mahdl VTGNRFETs.
Erasmus Langer Siegfried Selberherr. Finally, the application of these methods to study novel electronic devices such as nanotubes, graphene, Si-nanowires, and low-dimensional thermoelectric devices and photodetectors are discussed. The device response was studied for a wide range of photon energies. Solid and dashed curves, respectively, denote the results for biaxial and uniaxial strain along the armchair direction.
Visit our Beautiful Books page and find lovely books for kids, photography lovers and more. We have shown that by appropriately selecting the gate-source and gate-drain spacer lengths we can improve not only the ambipolar behavior and static characteristics but also the dynamic characteristics of the device. Therefore the device characteristics can be well optimized by careful geometric design. Computational Single-Electronics Christoph Wasshuber.
All simulations were based on the assumption of cylindrical symmetry. The Green function is studied in detail for systems both under equilibrium and under nonequilibrium conditions. Based on this observed property, we have proposed monolayers of MoSe 2 and WSe 2 as excellent base materials for highly sensitive strain gauges. In order to study the static operation of these devices more deeply, we plan to include scattering into our simulations, which can be achieved by using Buetikker probes.
Finally, the application of these methods to study novel electronic devices such as nanotubes, graphene, Si-nanowires and low-dimensional thermoelectric devices and photodetectors are discussed. Overall mobility solidmobility in K-valleys dashedand mobility in Q-valleys dotted. Dispatched from the UK in 4 business days When will my order arrive?
Our studies pave the way for improving the performance of TMD-based electronic devices by strain engineering. Because the formalism enables rigorous modeling of different scattering mechanisms in terms of self-energies, but an exact evaluation of self-energies for realistic systems is not possible, their approximation and inclusion in the pourcath kinetic equations of the Green pourffath are elaborated.
Graphene, a one-atomic carbon sheet with a honeycomb structure, has attracted significant attention due to its unique physical properties. He studied electrical engineering at the Sharif University of Technology, where he received the degree of Master of Science in GNRs have recently attracted much interest as they are recognized as promising building blocks for nano-electronic devices. Even in the presence of extrinsic scattering sources, the gauge factors of these materials are much larger than those reported for most of pouffath materials typically used for strain gauges.
Publications Authored by Mahdi Pourfath | PubFacts
Mahdi Pourfath was born in Tehran, Iran, in His scientific interests include the numerical study of novel nano-electronic devices. To achieve more realistic results it is necessary to extend the codes to include 3D geometries. Mahdi Pourfath was born in Tehran, Iran, in Optical transition matrix elements of graphene across the whole of the Brillouin zone. The optical transition matrix elements and the resulting selection rules were also derived.
A small tensile strain has a higher impact on the mobility of materials with a smaller energy distance between the valleys, such as MoSe 2 and WSe 2.
Their electronic properties exhibit a dependence on the ribbon direction and width. Product details Format Paperback pages Dimensions x x He joined the Insitute for Microelectronics in Octoberwhere he is currently working on his doctoral degree. He joined the Institute for Microelectronics in Octoberwhere he received his doctoral degree in technical sciences in July and the venia docendi in microelectronics in March He studied electrical engineering at the Sharif University of Technology, where he received the degree of Master of Science in Unlike conventional strain gauges where geometric and piezoelectric terms contribute to the gauge factor, in these materials the intervalley phonon-limited mobility is strongly affected by strain, which results in large gauge factors.
Monolayer and bilayer graphene has been utilized as the channel material for Field-Effect Transistors FETswhere the monolayer structure of graphene results in excellent gate control over the channel. Back cover copy For modeling the transport of carriers in nanoscale devices, a Green-function formalism is the most accurate approach.